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trenchfet power mosfets new low thermal resistance powerpak package with low 1.07-mm profile pwm optimized for fast switching

primary side switch for high density dc/dc telecom/server 48-v dc/dc industrial and 42-v automotive si7450dp vishay siliconix new product document number: 71432 s-03475?rev. b, 16-apr-01 www.vishay.com 1 n-channel 200-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.080 @ v gs = 10 v 5.3 200 0.090 @ v gs = 6 v 5.0 n-channel mosfet g d s 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view

parameter symbol 10 secs steady state unit drain-source voltage v ds 200 gate-source voltage v gs 20 v t a = 25 c 5.3 3.2 continuous drain current (t j = 150 c) a t a = 70 c i d 4.3 2.6 pulsed drain current i dm 40 a avalanche current i as 15 continuous source current (diode conduction) a i s 4.3 1.6 t a = 25 c 5.2 1.9 maximum power dissipation a t a = 70 c p d 3.3 1.2 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 10 sec 19 24 maximum junction-to-ambient a steady state r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 1.5 1.8 c/w notes a. surface mounted on 1? x 1? fr4 board.
si7450dp vishay siliconix new product www.vishay.com 2 document number: 71432 s-03475 ? rev. b, 16-apr-01

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 160 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a v gs = 10 v, i d = 4.0 a 0.065 0.080 drain-source on-state resistance a r ds(on) v gs = 6.0 v, i d = 4.0 a 0.070 0.090 forward transconductance a g fs v ds = 15 v, i d = 5 a 19 s diode forward voltage a v sd i s = 2.8 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 34 42 gate-source charge q gs v ds = 100 v, v gs = 10 v, i d = 4.0 a 7.5 nc gate-drain charge q gd 12.0 turn-on delay time t d(on) 14 20 rise time t r v = 100 v, r = 25 20 30 turn-off delay time t d(off) v dd = 100 v, r l = 25 i d 4.0 a, v gen = 10 v, r g = 6 32 50 ns fall time t f 25 35 gate resistance r g 0.85 source-drain reverse recovery time t rr i f = 2.8 a, di/dt = 100 a/ s 70 100 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0 5 10 15 20 25 30 35 40 0123456 0 8 16 24 32 40 0246810 v gs = 10 thru 6 v t c = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 5 v 4 v
si7450dp vishay siliconix new product document number: 71432 s-03475 ? rev. b, 16-apr-01 www.vishay.com 3

? on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 0 4 8 12 16 20 0 15304560 0.00 0.05 0.10 0.15 0.20 0 8 16 24 32 40 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 100 v i d = 4.0 a i d ? drain current (a) v gs = 10 v i d = 4.0 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 0.25 0246810 t j = 150 c t j = 25 c i d = 4.0 a 50 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 6 v v gs = 10 v
si7450dp vishay siliconix new product www.vishay.com 4 document number: 71432 s-03475 ? rev. b, 16-apr-01

10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.001 0 1 80 100 20 10 0.01 single pulse power, juncion-to-ambient time (sec) 60 40 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c)

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